Method for removing a top corner of a trench

Details Method for removing a top corner of a trench Method for removing a top corner of a trench

1997-12-30

1999-08-03

Dang, Trung

Semiconductor device manufacturing: process

Formation of electrically isolated lateral semiconductive...

Grooved and refilled with deposited dielectric material

438424, 438437, 438978, 148DIG50, H01L 2176

Patent

active

059337494

ABSTRACT:
A method for removing the top corner of the trench is disclosed. After the formation of an oxide layer and then a nitride layer over a substrate, a portion of the nitride layer, the oxide layer and the substrate are removed to form a trench. A mask is next formed on the nitride layer, wherein the opening of the mask is larger than the corresponding trench. A dry etching is performed to etch the exposed nitride layer and the substrate, using said mask. After removing the mask and the nitride layer, a liner oxide layer is then formed. The dry etching process removes the top corner to form a grading corner which consequently avoids charge accumulation and point discharging.

REFERENCES:
patent: 4882291 (1989-11-01), Jeuch
patent: 4889928 (1989-12-01), Jeuch
patent: 5801083 (1998-09-01), Yu et al.
patent: 5880004 (1999-03-01), Ho

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