Method for surface treatment of a cadmium zinc telluride crystal

Semiconductor device manufacturing: process – Making device or circuit responsive to nonelectrical signal – Responsive to electromagnetic radiation

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438475, H01L 2100

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active

059337060

ABSTRACT:
A method for treatment of the surface of a CdZnTe (CZT) crystal that reduces surface roughness (increases surface planarity) and provides an oxide coating to reduce surface leakage currents and thereby, improve resolution. A two step process is disclosed, etching the surface of a CZT crystal with a solution of lactic acid and bromine in ethylene glycol, following the conventional bromine/methanol etch treatment, and after attachment of electrical contacts, oxidizing the CZT crystal surface.

REFERENCES:
patent: 4286277 (1981-08-01), Longshore
patent: 4436580 (1984-03-01), Boyd et al.
patent: 4861421 (1989-08-01), Bienstock
patent: 4909863 (1990-03-01), Birkmire et al.
patent: 5137544 (1992-08-01), Medellin
patent: 5157876 (1992-10-01), Medellin
patent: 5181985 (1993-01-01), Lampert et al.
patent: 5279974 (1994-01-01), Walsh
patent: 5457330 (1995-10-01), Turner et al.
patent: 5528495 (1996-06-01), Roscoe
patent: 5647954 (1997-07-01), Matthews
patent: 5674779 (1997-10-01), Tijburg et al.

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