Method for the passivation of silicon components

Details Method for the passivation of silicon components Method for the passivation of silicon components

1982-10-12

1988-01-05

Smith, John D.

Stock material or miscellaneous articles

Structurally defined web or sheet

Discontinuous or differential coating, impregnation or bond

357 52, 357 67, 428450, H01L 2128

Patent

active

047176172

ABSTRACT:
Passivation of aluminum-metallized silicon components by applying at least one silicon layer. For the purpose of the subsequent contacting, the components are annealed after the application of the silicon layer at a temperature from 480.degree. to 570.degree. C. if the silicon layer thickness exceeds 0.1 .mu.m and a temperature from 400.degree. to 500.degree. C. if the silicon layer is up to about 0.1 .mu.m thick, it being possible to omit the annealing operation if the silicon layer thickness is less than about 0.05 .mu.m.

REFERENCES:
patent: 3740835 (1973-06-01), Duncan
patent: 3881971 (1975-05-01), Greer
patent: 3918149 (1975-11-01), Roberts
Aoki et al., "`SIPOS`--A New Technology for Silicon Surface Passivation", JEE, No. 109, pp. 44-48, Jan. 1976.

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