Metal working – Method of mechanical manufacture – Assembling or joining
Patent
1985-02-19
1986-07-22
Saba, William G.
Metal working
Method of mechanical manufacture
Assembling or joining
29576B, 29576E, 29578, 29580, 148 15, 148174, 148175, 148DIG53, 148DIG82, 148DIG88, 148DIG122, 357 15, 357 22, H01L 21203, H01L 21302
Patent
active
046010963
ABSTRACT:
The fabrication of high performance and reliable Buried Channel Field Effect Transistor (BCFET) using Schottky gate junction and heavily doped N layers for the source and drain electrode is described. The BCFET is composed of a semi-insulating substrate in which two N layers for the drain electrodes and one N layer for the source electrode are formed in one of the semi-insulating surface. The N source electrode is centrally located between the two N drain electrodes and all three lie in the same plane. The source and drain electrodes are separated by a thin semi-insulating layer, the length of which can range from 0.5 micron to several micron range, depending on the desired voltage breakdown. A Schottky gate is defined in an active N layer directly above the source N layer. The ohmic contacts for the source and drain N layers are defined several mcirons away from the Schottky junction, resulting in a considerable improvement in device reliability. Reliability is further enhanced by the fact that the resulting device is buried within the material where it is insulated from the ambient.
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Eaton Corporation
Saba William G.
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