Semiconductor laser device having optical guilding layers of une

Coherent light generators – Particular active media – Semiconductor

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372 46, H01S 319

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active

048457248

ABSTRACT:
A semiconductor laser device comprising a double-heterostructure that is composed of an active layer and a pair of cladding layers sandwiching the active layer therebetween, a striped structure in which current injected into the laser device is confined, the striped structure being constituted by a part of the double-heterostructure, and optical guiding layers positioned between one cladding layer and the active layer and between the active layer and the other cladding layer, wherein the resistance of one optical guiding layer positioned at the striped structure side is higher than that of the other optical guiding layer positioned opposite to the striped structure side.

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NEC Corp, Patent Abstracts of Japan 10(259), E-434, 2315.
Fujii et al., (1985) Fujitsu Scientific & Technical Journal 21(4):421-426.
Shotov et al., (1986) Soviet Technical Physics Letters 12(11):574-575.
Wada et al., (1985) Electronics Letters 21(22):025-1026.
Okajima et al., (1981) Japanese Journal of Applied Physics 21:353-358.

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