Method of making precision high-value MOS capacitors

Details Method of making precision high-value MOS capacitors Method of making precision high-value MOS capacitors

1984-11-28

1987-01-27

Roy, Upendra

Metal treatment

Compositions

Heat treating

29571, 29576B, 29577C, 148175, 148187, 357 91, H01L 2122, H01L 21265

Patent

active

046392742

ABSTRACT:
A method for producing an improved capacitor in MOS technology utilizing a thin layer oxide dielectric to improve the active/parasitic capacitance ratio while maintaining a high breakdown voltage and a low leakage current.
A polycrystalline silicon layer is formed over a silicon dioxide field region on a wafer of semiconductor silicon. Phosphorus ions are implanted in the polycrystalline silicon layer at an implant energy between approximately 80 and 100 keV. The surface of the polycrystalline silicon layer is oxidized to form an interpoly oxide, utilizing an oxidation temperature which, for the implant dosage of phosphorus ions used, is sufficient to make the interpoly oxide layer approximately 770 Angstroms thick. The structure is then annealed at a temperature of approximately 1100.degree. C. in oxygen and HCl. A second polycrystalline silicon layer is formed over the interpoly oxide layer, and the process completed in the conventional manner.

REFERENCES:
patent: 4208670 (1980-06-01), Hoffmann et al.
patent: 4212684 (1980-07-01), Brower
patent: 4240195 (1980-12-01), Clemens et al.
patent: 4249194 (1981-02-01), Rogers
patent: 4373250 (1983-02-01), Malwah
patent: 4391032 (1983-07-01), Schulte
patent: 4459740 (1984-07-01), Schwabe et al.
patent: 4466177 (1984-08-01), Chao

Affiliated with

Also associated with

Rating

Method of making precision high-value MOS capacitors does not yet have a rating. At this time, there are no reviews or comments for this patent.

If you have personal experience with Method of making precision high-value MOS capacitors, we encourage you to share that experience with our LandOfFree.com community. Your opinion is very important and Method of making precision high-value MOS capacitors will most certainly appreciate the feedback.

Rate now

Comments { 0 }

Profile ID: LFUS-PAI-O-856640