Excavating
Patent
1993-03-01
1995-01-10
Atkinson, Charles E.
Excavating
371 211, G11C 2900
Patent
active
053814193
ABSTRACT:
The present invention is directed to a method for detecting retention faults in each of a plurality of read/write memory elements (12.sub.l -12.sub.z), arranged in a plurality of banks (14.sub.l -14.sub.k) coupled in daisy chain fashion. Retention faults are detected, in accordance with the method, by signaling the banks in sequence, at each of three separate intervals, to cause the memory elements in each bank to execute a first, second and third sequence of read and/or write instructions. Execution of the second sequence of read and/or write operations is delayed so each memory element can be read after a prescribed interval to detect a first bit pattern written in each memory at the end of the first sequence. Similarly, execution of the third sequence of read and/or write operations is delayed so each memory element can be read after a prescribed interval to detect a second bit, complementary to the first pattern, written in the memory element at the end of the second sequence. By delaying the execution of the second and third sequences of read and/or write operations, retention faults, if any, can manifest themselves.
REFERENCES:
patent: 3751649 (1973-08-01), Hart
patent: 4965799 (1990-10-01), Green et al.
patent: 4969148 (1990-11-01), Nadeau-Doslie et al.
patent: 5033048 (1991-07-01), Pierce et al.
patent: 5053698 (1991-10-01), Ueda
patent: 5222066 (1993-06-01), Grula et al.
patent: 5224101 (1993-06-01), Popyack, Jr.
patent: 5229999 (1993-07-01), Cushing et al.
patent: 5258986 (1993-11-01), Zerbe
patent: 5274648 (1993-12-01), Eikill et al.
R. Dekker, F. Beenker, and L. Thijssen, "A Realistic Fault Model and Test Algorithms for Static Random Access Memories", IEEE Transactions on Computer-Aided Design, vol. 9, No. 6, Jun. 1990, pp. 567-572.
AT&T Corp.
Atkinson Charles E.
Le Dieu-Minh
Levy Robert B.
LandOfFree
Method and apparatus for detecting retention faults in memories does not yet have a rating. At this time, there are no reviews or comments for this patent.
If you have personal experience with Method and apparatus for detecting retention faults in memories, we encourage you to share that experience with our LandOfFree.com community. Your opinion is very important and Method and apparatus for detecting retention faults in memories will most certainly appreciate the feedback.
Profile ID: LFUS-PAI-O-856383