Semiconductor devices

Details Semiconductor devices Semiconductor devices

1988-12-13

1989-07-04

Edlow, Martin H.

357 41, 357 42, H01L 2702

Patent

active

048455326

ABSTRACT:
A bipolar transistor structure (1) which can be used in an integrated circuit where bipolar (1) and CMOS transistors (2,3) are formed simultaneously on one substrate. In integrated circuit form the material, for example polycrystalline silicon, used for the gates (11,21) of the CMOS transistors is also used for the emitters (29) of the bipolar transistors, the collectors of the bipolar devices are comprised by doped wells (5) in the substrate (4) and the base contacts of the bipolar devices are comprised by regions (27,27a) equivalent to source and drain regions (17,18) of the n-well MOS transistors and bridged by base implants (28). The conventional CMOS processing is modified by the addition of two masking steps and one implant (base implant). One masking step defines the area for the base implant (28) and the other masking step defines an area of the oxide (30) over the base implant which must be removed to allow contact between the polycrystalline silicon (29), which is suitably doped to provide the emitter, and the base ( 27,27a,28). The base contacts are produced in a semi-self-aligned manner.

REFERENCES:
patent: 4120707 (1978-10-01), Beasom
patent: 4233615 (1980-11-01), Takemoto et al.
patent: 4239558 (1980-12-01), Morishita
patent: 4503603 (1985-03-01), Blossfeld
patent: 4507847 (1985-04-01), Sullivan
patent: 4673965 (1987-06-01), Rusch
"2 Micron Merged Bipolar--CMOS Tech.", Alvara et al., IEDM '84, pp. 761-764 (1984).
"An Advanced PSA Technology For High-Speed Bipolar LSI", Nakashiba et al., IEEE Journal Solid State Circuits, vol. SC 15, No. 4, pp. 455-459.
"Comparison of Experimental and Theoretical Results on (etc.)", Ashburn et al., IEEE Transactions on Electron Devices, vol. ED-31, No. 7, 1984, pp. 853-860.
"A True Polysilicon Emitter Transistor", Rowlandson et al., IEEE Electron Device Letters, 6/85, vol. EDL-6, No. 6, pp. 288-290.

Affiliated with

Also associated with

Rating

Semiconductor devices does not yet have a rating. At this time, there are no reviews or comments for this patent.

If you have personal experience with Semiconductor devices, we encourage you to share that experience with our LandOfFree.com community. Your opinion is very important and Semiconductor devices will most certainly appreciate the feedback.

Rate now

Comments { 0 }

Profile ID: LFUS-PAI-O-856158