Semiconductor laser

Details Semiconductor laser Semiconductor laser

1989-07-20

1990-10-16

Sikes, William L.

Coherent light generators

Particular active media

Semiconductor

372 45, H01S 319

Patent

active

049641352

ABSTRACT:
A semiconductor laser includes a first cladding layer having a forward mesa with at least one end at least partially spaced from the adjacent facet of the laser. A current blocking layer buries the mesa at its sides and at least partially at the ends of the mesa so that the ends are at least partially spaced from the facets. The current blocking layer reduces current injection and surface recombination at the facets at least partially spaced from the mesa ends, thereby increasing the catastrophic optical damage level of the laser. The mesa is formed without etching or exposing the active layer so that formation of interfaces that refract light or shorten laser life-time are avoided. An increase in COD level of about 20 percent is achieved in the invention.

REFERENCES:
patent: 4849372 (1980-07-01), Takemoto
Nakatsuka et al, "A New Self-Aligned . . . by MOCVD", Japanese Journal of Applied Physics, vol. 25, No. 6, Jun. 1986, pp. 498-500.
Yang et al, "High Power Operation . . . (ICSP) Lasers", Electronics Letters, vol. 21, No. 17, Aug. 15, 1985, pp. 751-752.
Mawst et al, "Complementary Self-Aligned . . . Vapor Deposition", Electronics Letters, vol. 21, No. 20, Sep. 26, 1985, pp. 903-905.

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