Method, apparatus and computer program product for simulating io

Details Method, apparatus and computer program product for simulating io Method, apparatus and computer program product for simulating io

1998-03-26

1999-08-03

Teska, Kevin J.

Boots, shoes, and leggings

364488, 364489, 364490, 364491, G06F 1900

Patent

active

059333596

ABSTRACT:
An ion-implantation simulation method including (1) a step of generating orthogonal meshes for a multilayer-structure substrate, (2) a step of taking out a longitudinal strip, (3) a step of determining a function representing an impurity distribution in the longitudinal strip, (4) a step of integrating the function representing the impurity distribution in the range of each cell in the longitudinal strip, and dividing the integration value by the integration range to set the division result as the impurity concentration in the cell, (5) a step of taking out a transverse strip, (6) a step of determining a function of re-distributing the impurity distribution in the transverse strip in the transverse direction, and (7) a step of integrating the re-distributing function in the range of each cell in the transverse direction, dividing the integration result by the integration range and setting the division result as the impurity concentration in the cell.

REFERENCES:
patent: 5737250 (1998-04-01), Sawahata
patent: 5784302 (1998-07-01), Kumashiro
Ryssel, H. et al., "Models for Implantation into Multilayer Targets", Appl. Phys. A 41, 201-207 (1986).
Fuse, G., et al., "Depth Profiles of Boron Atoms with Large Tilt-Angle Implantations", Solid-State Science and Technology, J. Electrochem. Soc., May 1986, pp. 996-998.
Koike, Hideteru et al., "Simulator for Semiconductor Device Design", Fuji Sogo Research, pp. 114-115.
"Analysis and Simulation of Semiconductor Devices", Springer-Verlag Vien New York, pp. 52-59.

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