Surface emitting semiconductor laser

Details Surface emitting semiconductor laser Surface emitting semiconductor laser

1994-01-26

1995-02-28

Epps, Georgia Y.

Coherent light generators

Particular active media

Semiconductor

372 46, 372 49, H01S 319

Patent

active

053944232

ABSTRACT:
A first insulation film is provided on the x axis side surfaces of a mesa on a substrate of a surface emitting semiconductor laser, and a second insulation film is provided on the y axis side surfaces of the mesa. The x and y axes are orthogonal to each other. The first and second insulation films are formed at different temperatures, so that stress applied to an active layer is different between the x and y axis directions. Consequently, the polarization of an output light is controlled to be on a selected axis from the x and y axis directions.

REFERENCES:
Extended Abstracts (The 39th Spring Meeting, 1992); The Japan Society of Applied Physics and Related Societies, No. 3, 1992 Mar. 28-31.
Tsukada et al., "Very Low Current Operation of Mesa Stripe Geometry Double Heterostructure Injection Laser," Appl. Phys Lett., vol. 29, No. 9, 1 May 1972, pp. 344-345.

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