Semiconductor device having bipolar transistor with trench

Details Semiconductor device having bipolar transistor with trench Semiconductor device having bipolar transistor with trench

1988-09-29

1990-10-16

Hille, Rolf

357 49, 357 59, 357 65, H01L 2972, H01L 2712, H01L 2904, H01L 2348

Patent

active

049639579

ABSTRACT:
A semiconductor device having a bipolar transistor with a trench is disclosed. An active region of the substrate is surrounded by the trench. Collector, base and emitter regions of the transistor are formed in the active region. A collector electrode is formed in a lower section of the trench, and a base electrode is formed in an upper section of the identical trench.

REFERENCES:
patent: 4764801 (1988-08-01), McLaughlin et al.
patent: 4887144 (1989-12-01), Cook et al.
patent: 4910572 (1990-03-01), Kameyama
patent: 4910575 (1990-03-01), Komeda et al.
T. Sakai et al., "Super Self-Aligned Bipolar Technology", in 1983 Symposium on VLSI Technology, Sep. 13-15, Digest of Technical Papers, pp. 16-19.
K. Ueno et al., "A Sub-40 PS ECL Circuit at a Switching Current of 1.28 MA", in IEDM 1987, Technical Digest, pp. 371-374.

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