1989-02-07
1990-10-16
Hille, Rolf
357 13, 357 30, H01L 4902
Patent
active
049639471
ABSTRACT:
The mean drift speed of charge carriers in a semiconductor element can be increased if this semiconductor element has narrow layers which are alternately n-doped and p-doped on their planes, with undoped semiconductor material between these layers. A structure of this type is however difficult to manufacture, since it requires both doping zones in layer thicknesses of 2 nm and undoped semiconductor material between these doped zones. The semiconductor element in accordance with the invention therefore has successive layer sequences comprising two highly-doped layers with opposing conductivity. A weakly doped intermediate layer is arranged between each pair of layer sequences. These structures in accordance with the invention can be manufactured with MBE, LPCVD and MDVPE methods. To increase the switching frequency of pin diodes this structure in accordance with the invention can be incorporated into the intrinsic zones of these diodes.
REFERENCES:
patent: 4486765 (1984-12-01), Capasso
patent: 4799090 (1989-01-01), Nishizawa
patent: 4839706 (1989-06-01), Brennan
Article by J. A. Cooper, Jr. et al; IEEE Electron Device Letters, EDL-3, No. 12, 1982, pp. 407 and 408.
"Molecular Beam Epitaxy and Hetero Structures", pp. 533-535.
"Electron Transport in GaAs n.sup.+ -p.sup.- n.sup.+. . . ", pp. 409-411.
"Proceeding of the 17th International . . . ", pp. 495-498.
Bowers Courtney A.
Hille Rolf
Telefunken electronic GmbH
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