Chemical vapor deposition method and apparatus

Details Chemical vapor deposition method and apparatus Chemical vapor deposition method and apparatus

1985-08-30

1987-01-27

Bueker, Richard

Coating apparatus

Gas or vapor deposition

With treating means

118730, C23C 1308

Patent

active

046387625

ABSTRACT:
A chemical vapor deposition apparatus particularly useful for forming uniformly thick epitaxial layers of III-V semiconductor compounds on a plurality of substrates comprises a susceptor for supporting the substrates contained within a housing, gas inlet and outlet ports including a plurality of gas inlet ports spaced around the periphery of the housing and wherein the susceptor is provided with a plurality of helical flights extending from top to bottom which control the gas flow pattern.

REFERENCES:
patent: 3424629 (1969-01-01), Ernest
patent: 3603284 (1971-09-01), Garnache
patent: 3617371 (1971-11-01), Burmeister, Jr.
patent: 3637434 (1972-01-01), Nakanuma
patent: 3647535 (1972-03-01), Naber
patent: 3719166 (1973-03-01), Gereth
patent: 3775062 (1973-11-01), Susuki et al.
patent: 4190470 (1980-02-01), Walline
patent: 4322592 (1982-03-01), Martin
patent: 4421786 (1983-12-01), Mahajan et al.
patent: 4430149 (1984-02-01), Berkman
J. Electrochem. Soc.: Solid-State Science and Technology; "Si Epitaxial Growth of Extremely Uniform Layers by a Controlled Supplemental Gas Adding System", by T. Suzuki, Y. Inoue, T. Aoyama and M. Maki, Jun. 1985, pp. 1480-1487.

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