Method of making mo/tiw or w/tiw ohmic contacts to silicon

Details Method of making mo/tiw or w/tiw ohmic contacts to silicon Method of making mo/tiw or w/tiw ohmic contacts to silicon

1987-11-16

1989-07-04

Hearn, Brian E.

Fishing, trapping, and vermin destroying

437201, 437246, 437188, 357 71, 148DIG3, H01L 21283, H01L 2124

Patent

active

048450502

ABSTRACT:
A conductive member consisting of a first conductor of an alloy of titanium and tungsten and a second conductor of a refractory metal such as molybdenum is sintered to a conductive member of silicon to a temperature in the range of 600.degree. C. to 650.degree. C. in a reducing atmosphere to form a low resistance contact.

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patent: 4283439 (1981-08-01), Higashinakagawa et al.
P. B. Ghate, Thin Solid Films, 93(1982), pp. 359-383.
Ghate et al., Thin Solid Films, 53(1978), pp. 117-127.

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