Process for producing semiconductor devices by self-alignment te

Details Process for producing semiconductor devices by self-alignment te Process for producing semiconductor devices by self-alignment te

1987-08-31

1989-07-04

Hearn, Brian E.

Fishing, trapping, and vermin destroying

437 31, 437 29, 437 44, 437162, 437228, H01L 21265, H01L 21225, H01L 21465

Patent

active

048450464

ABSTRACT:
A method of manufacturing semiconductor device wherein the self-alignment technique is employed to simplify the manufacturing process and includes the steps of successively depositing multiple layer masking films comprising a first, a second and a third masking films on an n-type Si region, forming an island region of the multiple layer films and a peripheral portion of the second masking film which is etched away, by side-etching, from the edges of the other masking films, selectively forming an oxidized film, selectively etching the first oxidized film using the second masking film as a mask and forming fine contact windows between the selectively formed oxidized film and the first masking film, depositing a semiconductor thin film, lifting-off the semiconductor thin film by removing the second and third masking films and leaving a portion of the semiconductor film which contacts the windows, oxidizing the surface of the semiconductor thin film and removing the first masking film.

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