Method for enhancement of useful luminescence from vacancy defec

Details Method for enhancement of useful luminescence from vacancy defec Method for enhancement of useful luminescence from vacancy defec

1988-09-12

1990-10-16

Cooper, Jack

Radiant energy

Irradiation of objects or material

Ion or electron beam irradiation

2523014R, 423635, 423636, C09K 1155, C09K 1167

Patent

active

049637550

ABSTRACT:
Refractory oxide crystals suitable for use in tunable lasers and a method for preparing the same are provided. The crystals are characterized by high quantum efficiency, high thermal stability, good crystal transparency, and a high percentage of useful luminescence. The method for preparation of the crystals involves removing substantially all the hydrogen, thermochemically reducing the crystal's oxygen content to produce oxygen (anion) vacancy defects, and subsequently irradiating the crystal with electrons to inactivate trace H.sup.- ions so that an increased amount of short lived F.sup.+ luminescence is produced when the crystal is optically excited.

REFERENCES:
patent: 3829391 (1974-08-01), Chen et al.
patent: 4604225 (1986-08-01), Chen et al.
Y. Chen, "Electron Trapping Properties and Sensitivity to Ionizing Radiat of the Hydride Ionin Refractory Oxides", Crystal Latt. Def. and Amorph. Mat., 12 149, (1985).

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