Method of fabricating semiconductor memory device having trench

Details Method of fabricating semiconductor memory device having trench Method of fabricating semiconductor memory device having trench

1992-10-16

1995-01-10

Chaudhuri, Olik

Fishing, trapping, and vermin destroying

437 60, 437919, H01L 2170, H01L 2700

Patent

active

053806743

ABSTRACT:
A semiconductor memory device where trench capacitors for charge storage are arranged respectively to symmetric positions with respect to a gate electrode of a field effect transistor.
Since electrodes of the capacitor are connected to source or drain of the field effect transistor in self alignment, a required area is small and a fabricating method is quite simple in comparison with the prior art.

REFERENCES:
patent: 4873205 (1989-10-01), Critchlow et al.
patent: 4877750 (1989-10-01), Okumura
patent: 5234854 (1993-08-01), An et al.
patent: 5234856 (1993-08-01), Gonzalez
patent: 5273928 (1993-12-01), Tani

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