Mask and charged particle beam exposure method using the mask

Radiant energy – Irradiation of objects or material – Irradiation of semiconductor devices

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250398, H01J 3700

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active

053939883

ABSTRACT:
A mask is used for exposing a desired pattern on a substrate by a charged particle beam exposure. The mask comprises a plurality of pattern groups each including a plurality of exposure patterns within an approximately rectangular region, and a plurality of position matching patterns formed at positions different from those of the exposure pattern groups, where positional relationships of each of the exposure pattern groups and the position matching patterns are predetermined and fixed.

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Randal et al., "Masked Ion Beam Resist Exposure Using Grid Support Stencil Masks", J. Vac. Sci. Technol. B3(1), Jan./Feb. 1985.
Zapka et al., "High Resolution Distortion Measurements of Electron-Beam Transmission Masks", J. Vac. Sci. Technol. B3(1), Jan./Feb. 1985.
Levi, "A Li ne Electron Lens", J. Vac. Sci. Technol. B3(1), Jan./Feb. 1985.

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