Ion implantation apparatus

Details Ion implantation apparatus Ion implantation apparatus

1992-09-09

1995-02-28

Anderson, Bruce C.

Radiant energy

Irradiation of objects or material

Irradiation of semiconductor devices

350397, H01J 37317

Patent

active

053939867

ABSTRACT:
An ion implantation apparatus having a plasma source for generating ions, an ion accelerator for accelerating the generated ions, and a substrate holder provided on a position which the accelerated ions irradiate, wherein a current density of a desired kind of ions is measured by an electromagnetic ion energy analyzer having an electric field and a magnetic field, thereby controlling a dose of the ions.

REFERENCES:
patent: 2956169 (1960-10-01), King et al.
patent: 4574179 (1986-03-01), Masuzawa et al.
Matsuda, K., et al., "Large Diameter Ion Beam Implantation System", Nuclear Instruments & Methods in Physics Research/Section B (1987) vol. B21, pp. 314-316.
Rhee, M. J., "Compact Thomson Spectrometer", Rev. Sci. Instrum. (1984) 55(8):1229-1234.
Yamamoto, T., et al., "Thomson Parabola Ion Analyzer with Quick Data Acqusition", Japanese Journal of Applied Physics (1990) 29(9):1841-1845.
Thompson, B. E., et al., "Ion Bombardment Energy Distributions in Radio-Frequency Glow-Discharge Systems", Journal of Applied Physics (1986) 59(6):1890-1903.

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