Radiation imagery chemistry: process – composition – or product th – Radiation modifying product or process of making – Radiation mask
Patent
1993-07-29
1995-01-10
Rosasco, Steve
Radiation imagery chemistry: process, composition, or product th
Radiation modifying product or process of making
Radiation mask
430296, 430322, 430324, 430325, 430327, 430328, 430329, 430330, 430394, G03F 900
Patent
active
053806093
ABSTRACT:
The invention relates to a method for forming a resist pattern for dry etching a phase shifter layer in which a phase shifter pattern portion and a portion for protecting the surface of a light-blocking pattern are formed by a single photolithographic step. A light-blocking patter 40 is formed on a phase shifter layer 33, followed by the formation of a positive to negative image reversible resist thin film 41. A given region of the resist thin film 41 that includes a part of the unpatterned region thereof is exposed to ionizing radiation 42. Post-exposure baking for image reversal is carried out. Subsequently, the whole back side of the substrate is exposed to ultraviolet light 44 using the light-blocking pattern as a mask, thereby enabling only an unexposed region of the unpatterned resist to be soluble in a developer. The resist thin film 41 is developed to form a resist pattern 45.
REFERENCES:
patent: 4948706 (1990-08-01), Sugihara et al.
patent: 5244759 (1993-09-01), Pierrat
Fujita Hiroshi
Kurihara Masa-aki
Dai Nippon Printing Co. Ltd.
Rosasco Steve
LandOfFree
Method for fabricating photomasks having a phase shift layer com does not yet have a rating. At this time, there are no reviews or comments for this patent.
If you have personal experience with Method for fabricating photomasks having a phase shift layer com, we encourage you to share that experience with our LandOfFree.com community. Your opinion is very important and Method for fabricating photomasks having a phase shift layer com will most certainly appreciate the feedback.
Profile ID: LFUS-PAI-O-849917