Phase shift photomask comprising a layer of aluminum oxide with

Details Phase shift photomask comprising a layer of aluminum oxide with Phase shift photomask comprising a layer of aluminum oxide with

1992-11-12

1995-01-10

Rosasco, Steve

Radiation imagery chemistry: process, composition, or product th

Radiation modifying product or process of making

Radiation mask

430311, 430313, G03F 900

Patent

active

053806085

ABSTRACT:
The invention is directed to a phase shift photomask for which a film made of a material capable of providing an etching stopper layer that excels in etching selectivity and can interrupt etching surely and automatically, and provides a phase shift photomask at least comprising a substrate 30 and a phase shifter pattern made of a material composed mainly of silicon oxide that is provided on the surface of the substrate directly or with an opaque layer 37 interposed therebetween, said phase shift photomask being characterized in that the surface 30 is provided on the surface with an etching stopper layer 30 that comprises a mixture of Al.sub.2 O.sub.3 with MgO, ZrO.sub.2, Ta.sub.2 O.sub.5 or HfO, or CrO.sub.x, CrN.sub.y, CrC.sub.z, CrO.sub.x N.sub.y, CrO.sub.x C.sub.z or CrO.sub.x N.sub.y C.sub.z, or MgF.sub.2-2x O.sub.y, CaF.sub.2-2x O.sub.y, LiF.sub.2-2x O.sub.y, BaF.sub.2-2x O.sub.y, La.sub.2 F.sub.6-2x O.sub.y or Ce.sub.2 F.sub.6-2x O.sub.y, whereby the etching stopper layer is allowed to etch a transparent film for a phase shifter surely and accurately, when making a phase shifter pattern by etching.

REFERENCES:
patent: 4440841 (1984-04-01), Tabuchi
patent: 5246799 (1993-09-01), Pierrat

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