Semiconductor laser device of refractive index guide type

Details Semiconductor laser device of refractive index guide type Semiconductor laser device of refractive index guide type

1987-03-25

1988-06-07

Davie, James W.

Coherent light generators

Particular active media

Semiconductor

357 16, 357 17, 372 46, H01S 319

Patent

active

047501847

ABSTRACT:
A semiconductor laser device comprises a semiconductor substrate of the first conductive type, with a groove, the width of the bottom of which is greater than that of the top, a current blocking layer of the second conducting type, formed on said semiconductor substrate discontinuously at both sidewalls of said groove, a lower side cladding layer of the first conductive type for covering said current blocking layer and the sidewalls of said groove, an active layer formed on said lower side cladding layer and having an band gap smaller than that of said lower side cladding layer and a large refractive index, an upper side cladding layer of the second conductive type formed on said active layer and having an band gap greater than that of the active layer and a small refractive index, and a contact layer of the second conductive type formed on said upper cladding layer so that it is possible to easily grow a high quality crystal repeatedly with merely one crystal growth process and that the laser device has a stable fundamental transverse-mode operation, a low threshold current and small astigmatisms.

REFERENCES:
Y. Mihashi, Y. Nagai, Y. Seiwa, T. Aoyagi, T. Kadowaki, K. Ikeda and W. Susaki, "A Novel Self-Aligned AlGaAs Laser with Bent Active Layer Grown by MOCVD", Dec. 1985, IEDM, pp. 646-649.

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