Stock material or miscellaneous articles – Structurally defined web or sheet – Discontinuous or differential coating – impregnation or bond
Patent
1988-10-06
1990-10-16
Ryan, Patrick
Stock material or miscellaneous articles
Structurally defined web or sheet
Discontinuous or differential coating, impregnation or bond
428428, 428457, 428688, 428689, 428901, 361397, 427 58, 427 96, 427 99, 4273722, 156610, 156614, 174250, B32B 900
Patent
active
049634232
ABSTRACT:
In an apparatus for forming an aluminum thin film, or an aluminum alloy thin film useful to an interconnecting material of an electronic device, there are provided:
REFERENCES:
Kato, et al., "Magnetron-Plasma CVD System and Its Application to Aluminum Film Deposition," Extended Abstracts of the 18th (1986 International) Conference On Solid State Devices and Materials, Tokyo 1986, pp. 495-498.
Green, et al., "Aluminum Films Prepared by Metal-Organic Low Pressure Chemical Vapor Deposition," Thin Solid Films, 114 (1984) pp. 367-377.
Solanki, et al., "Photodeposition of Aluminum Oxide anbd Aluminum Thin Films," Applied Physics Lett., 43 (5), Sep. 1, 1983.
Holzl, "III.2 Grain Refinement by Thermomechanical Means," Proceedings of the 6th International Conference on Chemical Vapor Deposition, The Electrochemical Society, Princeton 1977, pp. 107-114.
Dutta, et al., "Characterization and Properties of Controlled Nucleaton Thermochemical Deposition (CNTD)-Silicon Carbide," Journal of Materials Science, 15 (1980) pp. 2183-2191.
Biswas, et al., "Vapor Phase Deposition of Aluminum Film on Quartz Substrate," J. Electrochem. Soc., vol. 130, No. 1.
Egger, "Kinetics of the Intramolecular Four-Center Elimination of Isobutylene from Triisobutylaluminum in the Gas Phase," Journal of the American Chemical Society, 91:II May 21, 1969, pp. 2868-2871.
Higashi, et al., "Patterned Aluminum Growth via Excimer Laser Activasted Metalorganic Chemical Vapor Deposition," Applied Physics Letter, 48 (16), Apr. 21, 1986, pp. 1051-1053.
Lander, et al., "Surface Reactions of Silicon with Aluminum and with Indium," Surface Science 2 (1964) 553-565.
Harris, et al., "Solid-Phase Crystallization of Si Films in Contact with Al Layers," Journal of Applied Physics, vol. 48, No. 7, Jul. 1977 pp. 2897-2904.
McLeod, et al., "Effects of Sputter Etching and Process Techniques on the Properties of Sputtered Aluminum Films," J. Vac. Sci. Technol., 16(2) Mar./Apr. 1979, pp. 369-376.
Pierson, "Aluminum Coatings by the Decomposition of Alkyls," Thin Solid Films, 45 (1977) 257-263.
Learn, et al., "Methods for Minimizing Silicon Regrowth in Aluminum Films," Appl. Phys. Lett., 35 (8), Oct. 15, 1979, pp. 611-614.
Malazgirt, et al., "Production of Aluminum and Aluminum Coatings by Thermal Decomposition of Aluminum Alkyls," Metallurgical Transactions, vol. 11B, Jun. 1980, pp. 225-232.
Fukuyama, et al., "Deposition of Si-Doped Al Film by Reactive Sputtering," JPN, J. Appl. Phys., vol. 18 (1979), No. 5, pp. 987-988.
Takamatsu, et al., "Fundamentals of Low Pressure Deposited CVD Aluminum for VLSI Metallization," Abstract No. 334.
Nakamura, "Recent Advance in Multilevel Interconnection," Extended Abstracts of the 19th Conference on Solid State Devices and Materials, Tokyo, 1987, pp. 403-406.
Cooke, et al., "LPCVD of Aluminum and Al-Si Alloys for Semiconductor Metallization," Solid State Technology, Dec. 1982, pp. 62-65.
Higashi, et al., "Summary Abstract: Nucleaton Considerations in the Wavelength-dependent Activation Selectivity of Aluminum Chemical-vapor Deposition," J. Vac. Sci. Technol. B 5 (5). Sep./Oct. 1987, pp. 1441-1443.
Levy, et al., "Low Pressure Chemical Vapor Deposition of Tungsten and Aluminum for VLSI Applications," Journal of the Electrochemical Society-Reviews and News, Feb. 1987, pp. 37C-49C.
Suzuki, et al., "Formation of Al Films on Pitch-base Carbon Fibers from Tri-iso-butyl Aluminum by the Reduced CVD," J. Japan Inst. Metals, vol. 51, No. 6 (1987), pp. 577-583.
Horiguchi, et al., "Molebular Beam Epitaxial Growth of GaAs Using Triethylgallium and Arsine," Japanese Journal of Applied Physics, vol. 25, No. 12, Dec. 1986, pp. L979-L982.
Amazawa, et al., "Selective Chemical Vapor Deposition of Aluminum," Extended Abstracts of the 18th (1986) International) Conference on Solid State Devices and Materials, Tokyo, 1986, pp. 755-756.
Yamada, "Metallization by Ionized Cluster Beam Deposition," IEEE Transactions on Electron Devices, vol. Ed-34, No. 5, May 1987, pp. 1018-1025.
Suzuki, et al., "Pyrolysis and Photolysis of Trimethylaluminum," Japanese Journal of Applied Physics, vol. 25, No. 8, Aug., 1986, pp. 1236-1242.
Levy, et al., "OPCVD Aluminum for VLSI Procxessing," Semicon/East 1985 Technical Program Proceedings, at the Bayside Exposition Center, Boston, Mass., on Sep. 17-19, 1985, presented by Semiconductor Equipment and Materials Institute, Inc.
Inokawa, et al., "Observation of Initial Stage of Al Epitaxial Growth on Si (III0 by Ionized Cluster Beam Deposition," Japanese Journal of Applied Physics, vol. 24, No. 3, Mar., 1985 pp., L173-L174.
Green, et al., "Structure of Selective Low Pressure Chemically Vapor-Deposited Films of Tungsten," J. Electrochem. Soc., vol. 132, No. 5, May, 1985, pp. 1243-1250.
Levy, et al., "Properties of LPCVD Aluminum Films Products by Disproportionation of Aluminum Monochloride," J. Electrochem. Soc., vol. 132, No. 2, Feb., 1985, pp. 457-463.
Levy, et al., "In-Source Al-0.5% Cu Metallization for CMOS Devices," J. Electrochem. Soc., vol. 132, No. 1, Jan., 1985, pp. 159-168.
Yamada, et al., "Epitaxial Growth of Al on Si(III) and Si (100) by Ionized-Cluster Beam," J. Appl. Phys., 56 (10), Nov. 15, 1984, pp. 2746-2750.
Levy, et al., "Characterization of LPCVD Aluminum for VLSI Processing," J. Electrochem. Soc., vol. 131, No. 9, Sep., 1984, pp. 2175-2182.
Kobayashi, T., "Epitaxial Growth of Al on Si by Gas-Temperature-Controlled Chemical Vapor Deposition," Japanese Journal of Applied Physics, vol. 27, No. 9, Sep., 1988, pp. L1775-1777.
Kobayashi Tsukasa
Sekiguchi Atsushi
Takagi Shinji
Anelva Corporation
Ryan Patrick
LandOfFree
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