Phase shifting photomask fabrication method

Details Phase shifting photomask fabrication method Phase shifting photomask fabrication method

1998-03-13

1999-08-03

Rosasco, S.

Radiation imagery chemistry: process, composition, or product th

Radiation modifying product or process of making

Radiation mask

G03F 900

Patent

active

059323787

ABSTRACT:
A phase shifting photomask fabrication method includes the steps of forming a recess in an upper surface of a transparent substrate having a depth sufficient to shift a phase of light, forming an opaque layer on the transparent substrate including the recess, forming a first patterning layer having a plurality of openings on the opaque layer, forming a plurality of side wall spacers on each side wall of the first patterning layer, etching the opaque layer by using the side wall spacers and exposing the transparent substrate, forming a second patterning layer on the exposed transparent substrate exposing a portion of the transparent substrate by selectively etching portions covered by the first patterning layer and the opaque layer, etching the exposed transparent substrate to a depth sufficient to effect a phase shift, and removing the side wall spacers and the second patterning layer. This method eliminates a micro loading effect by separately forming a wider main opening pattern unit and a narrower sub-opening pattern unit, and accurately controls the phase shift, improving reliability of the photomask.

REFERENCES:
patent: 5302477 (1994-04-01), Dao et al.
patent: 5455131 (1995-10-01), Kang et al.
patent: 5484672 (1996-01-01), Bajuk et al.

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