Semiconductor device including interlayer insulating film

Details Semiconductor device including interlayer insulating film Semiconductor device including interlayer insulating film

1990-11-28

1992-07-21

Hille, ROlf

357 54, H01L 21469, H01L 21473

Patent

active

051327740

ABSTRACT:
The method of forming an interlayer insulating film insulating first and second layers of conductor patterns in a semiconductor device includes the steps of preparing a reaction gas including at least ozone and silicon alkoxide, wherein the ratio of ozone with respect to silicon alkoxide is adjusted to be not less than 5 within the reaction gas, and forming an insulating film by CVD reacting the reaction gas at atmospheric pressure at the temperature of 350.degree. C.-450.degree. C., whereupon the interlayer insulating film includes at least the insulating film formed by atmospheric pressure CVD reaction.

REFERENCES:
patent: 4729006 (1988-03-01), Dally et al.
patent: 4872947 (1989-10-01), Wang et al.
patent: 4894352 (1990-01-01), Lane et al.
patent: 4981810 (1991-01-01), Fazan et al.
patent: 5028566 (1991-07-01), Lagendijk
patent: 5051380 (1991-09-01), Maeda et al.
patent: 5069747 (1991-12-01), Cathey et al.
"Low Temperature APCVD Oxide Using TEOS-Ozone Chemistry for Multilevel Interconnectoins"--Kotani et al--The International Electron Devices Meeting 1989, pp. 28.21-28.24.
International Electron Devices Meeting 1989, Washington, D.C. Dec. 3-6, 1989.

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