Semi-conductor barrier switching devices

Details Semi-conductor barrier switching devices Semi-conductor barrier switching devices

1981-12-24

1984-05-15

Edlow, Martin H.

357 13, 357 15, 357 33, 357 57, 357 58, H01L 2900, H01L 2990, H01L 2948, H01L 2912

Patent

active

044491409

ABSTRACT:
Two and three terminal semi-conductor barrier switching devices are disclosed in which a semi-conductor junction or a Schottky barrier is used to inject carriers towards a barrier formed by a narrow layer doped to have majority carriers of the type injected. In the non-conducting state the barrier prevents conduction but as an applied bias is increased the barrier begins to allow carriers of the opposite type to pass releasing the first mentioned carriers and causing the barrier height to be reduced. This action becomes regenerative with increasing bias and after passing through a negative resistance region, the device enters its conducting state. When the third terminal is present the device is made conducting by biasing its third terminal to cause carriers of the first mentioned type to be injected into the barrier region for example from a diffusion adjacent to the third terminal.

REFERENCES:
patent: 3566206 (1971-02-01), Bartelink et al.
patent: 4149174 (1979-04-01), Shannon
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Board et al. "Theory of Switching in Polysilicon-n-p.sup.+ Silicon Structures" Electronic Letters vol. 17, No. 1, pp. 41-42, Jan. 1981.
Malik et al. "Planar Doped Barriers in GaAs by Molecular Beam Epitaxy," Electronics Letters, vol. 16, No. 22, pp. 836-838, Oct. 1980.
Shannon, J. M., "A New Majority Carrier Diode-The Camel Diode" Proceeding 11th Conf. Solid State Devices, Tokyo 1979, Jap. Journal Appl. Phys. vol. 19, Supp. 19-1, pp. 301-304 (1980).
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