Semiconductor memory device having flip-flop circuits

Details Semiconductor memory device having flip-flop circuits Semiconductor memory device having flip-flop circuits

1990-04-04

1992-07-21

Hille, Rolf

357 51, 357 233, 357 20, H01L 2904, H01L 2702, H01L 2910, H01L 2906

Patent

active

051327716

ABSTRACT:
A semiconductor static random access memory having a high .alpha.-ray immunity and a high packing density is provided which is also capable of high-speed operation. A semiconductor memory device comprises static random access memory cells each including a flip-flop circuit. Storage nodes of each flip-flop circuit have respective pn-junctions formed at regions sandwiched between gate electrodes of first insulated gate field effect transistors and gate electrodes of second insulated gate field effect transistors, respectively. The pn-junction has an area smaller than that of a channel portion of the first or second insulated gate field effect transistor. The gate electrode of one of the two first insulated gate field effect transistors and the drain region of the other insulated gate field effect transistor, on one hand, and the drain region of the one insulated gate field effect transistor and the gate electrode of the other insulated gate field effect transistor, on the other hand, are electrically cross-coupled mutually through first and second electrically conductive films, respectively. Also, to increase packing density and enhance immunity to soft error, the gate electrodes of the first and second insulated gate field effect transistors extend substantially in parallel with one another and the channel regions of the first and second insulated gate field effect transistors extend substantially in parallel with one another.

REFERENCES:
patent: 4481524 (1984-11-01), Tsujide
patent: 4535426 (1985-08-01), Ariizumi et al.
patent: 4609835 (1986-09-01), Sakai et al.
patent: 4797725 (1989-01-01), Hashimoto

Affiliated with

Also associated with

Rating

Semiconductor memory device having flip-flop circuits does not yet have a rating. At this time, there are no reviews or comments for this patent.

If you have personal experience with Semiconductor memory device having flip-flop circuits, we encourage you to share that experience with our LandOfFree.com community. Your opinion is very important and Semiconductor memory device having flip-flop circuits will most certainly appreciate the feedback.

Rate now

Comments { 0 }

Profile ID: LFUS-PAI-O-848166