Semiconductor device having improved multi-layered substrate str

Details Semiconductor device having improved multi-layered substrate str Semiconductor device having improved multi-layered substrate str

1991-01-10

1992-07-21

Wojciechowicz, Edward J.

357 49, 357 50, 357 52, H01L 2904

Patent

active

051327708

ABSTRACT:
A semiconductor device includes a composite semiconductor substrate formed by disposing first and second semiconductor substrates in close contact with each other. At least one dielectric layer is formed in the composite semiconductor substrate. At least one polycrystalline layer is formed adjacent to the dielectric layer.

REFERENCES:
patent: 4484207 (1984-11-01), Nishizawa et al.
patent: 4875086 (1989-10-01), Malhi et al.
patent: 4881116 (1989-11-01), Lesk et al.

Affiliated with

Also associated with

Rating

Semiconductor device having improved multi-layered substrate str does not yet have a rating. At this time, there are no reviews or comments for this patent.

If you have personal experience with Semiconductor device having improved multi-layered substrate str, we encourage you to share that experience with our LandOfFree.com community. Your opinion is very important and Semiconductor device having improved multi-layered substrate str will most certainly appreciate the feedback.

Rate now

Comments { 0 }

Profile ID: LFUS-PAI-O-848127