Semiconductor component with turn-off facility

Details Semiconductor component with turn-off facility Semiconductor component with turn-off facility

1990-12-20

1992-07-21

Carroll, J.

357 55, 357 56, 357 71, 357 79, H01L 2974, H01L 2906, H01L 2348, H01L 2342

Patent

active

051327686

ABSTRACT:
In a semiconductor component with turn-off facility of the GTO type with direct pressure contact, a balancing of the local pressure distribution in the region of the cathode fingers (7) which results in an improved alternating load resistance and also in an extension of the allowable pressure range is achieved by structural matching of the anode metallization (4) to the gate-cathode structure on the cathode side.

REFERENCES:
patent: 5017991 (1991-05-01), Nishizawa et al.
English translation of reference L, supra.

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