Multilayer base heterojunction bipolar transistor

Details Multilayer base heterojunction bipolar transistor Multilayer base heterojunction bipolar transistor

1991-03-21

1992-07-21

Hille, Rolf

357 35, 357 16, 357 30, H01L 2972, H01L 29161, H01L 2714

Patent

active

051327643

ABSTRACT:
This is a p-n junction device and the device comprises: a substrate 10 composed of a semiconductor material; a heavily doped n type sub-collector layer 14 over the substrate; a n type collector layer 16 over the sub-collector layer; a heavily doped p type first base layer 18, over the collector layer; a p type second base layer 20, substantially thinner than the first base layer, over the first base layer, with the second base layer being less heavily doped than the first base layer; and a n type emitter layer 24 over the second base layer, whereby, the second base layer serves as a diffusion barrier between the base and the emitter. Other devices and methods are also disclosed.

REFERENCES:
patent: 4573064 (1986-02-01), McLevige et al.
patent: 4672414 (1987-06-01), Gabriel et al.
patent: 4794440 (1988-12-01), Capasso et al.
Dubon et al; "Double Heterojunction GaAs-GaAlAs Bipolar Transistors Grown by MOCVD for Emitter Coupled Logic Circuits"; 1983; IEEE; pp. 689-693; IEDM 83.
M. E. Hafizi, et al.; Reliability Analysis of GaAs/AlGaAs HBTs Under Forward Current/Temperature Stress; IEEE 1990; pp. 329-332.
P. M. Asbeck, et al.; GaAlAs/GaAs Heterojunction Bipolar Transistors: Issues and Prospects for Application; IEEE Transactions of Electron Devices, vol. 36, No. 10, Oct. 1989; pp. 2032, 2024-2042.
Herbert Kroemer; (Invited) Heterostructures for Everything: Device Principle of the 1980's?; Proceedings of the 12th Conference of Solid State Devices, Tokyo, 1980; Japanese Journal of Applied Physics, vol. 20 (1981) Supplement 20-1, pp. 9-13.

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