Solid state image sensing device and method of manufacturing the

Details Solid state image sensing device and method of manufacturing the Solid state image sensing device and method of manufacturing the

1990-12-26

1992-07-21

James, Andrew J.

357 24, H01L 2714

Patent

active

051327627

ABSTRACT:
In a solid state image sensor device including photoelectric conversion elements and charge transfer devices, an impurity layer constituting a surface layer formed on each of the charge storage layers of the photoelectric convertion elements extends in the lateral direction of the semiconductor layer so that, when viewed from stop, an end of the surface impurity layer coincides with an end of a transfer electrode of each of the charge transfer devices and serves as an isolation layer, thereby obviating problems associated with the degradation of performance of the sensor device due to expansion of the isolation layer by thermal diffusion.

REFERENCES:
patent: 4618874 (1986-10-01), Yamada

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