Method of manufacturing semiconductor devices

Details Method of manufacturing semiconductor devices Method of manufacturing semiconductor devices

1990-10-24

1992-07-21

Prenty, Mark

357 59, 357 71, 357 68, H01L 2701, H01L 2904, H01L 2348

Patent

active

051327562

ABSTRACT:
An improved method of manufacturing a semiconductor device wherein an insulating film, a conducting film, a first film to prevent conducting and refractory metal films from the reaction and a refractory metal film are sequentially deposited on a semiconductor substrate. Further, a second film is formed on the surface of the refractory metal film to prevent the exposed surface of the refractory metal film from the oxidization. Tungsten, molybdenum or the like is used as a refractory metal. A nitride film, a carbide film, or a silicide film of tungsten or molybdenum may be advantageously used as the second film.

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