Field effect transistor

Details Field effect transistor Field effect transistor

1991-08-01

1992-07-21

Prenty, Mark V.

357 49, 357 56, 357 59, H01L 2701, H01L 2712, H01L 2906, H01L 2904

Patent

active

051327554

ABSTRACT:
A field effect transistor is disclosed in which an underlayer has the protrusion wherein the channel is to be formed, and a lower insulating layer is provided on the underlayer around the protrusion. On the upper side of the lower insulating layer, first and second principal electrode region are respectively positioned on the two sides of the protrusion in the length-wise direction of the channel. Parts of the principal electrode regions make a junction with protrusion along the width-wise direction of the channel. On the upper side of the protrusion a gate electrode is provided with a gate insulating therebetween. The principal electrode regions serve as source/drain regions.

REFERENCES:
patent: 4862232 (1989-08-01), Lee
patent: 4887145 (1989-12-01), Washio et al.

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