Biaxial-stress barrier shifts in pseudomorphic tunnel devices

Details Biaxial-stress barrier shifts in pseudomorphic tunnel devices Biaxial-stress barrier shifts in pseudomorphic tunnel devices

1991-01-04

1992-07-21

Jackson, Jr., Jerome

357 16, 357 22, 357 30, H01L 29205

Patent

active

051327465

ABSTRACT:
Resonant tunneling devices having improved peak-to-valley current ratios are disclosed. The resonant tunneling device comprises a quantum well layer surrounded by first and second barrier layers, the first and second barrier layers being comprised of an indirect first III-V compound semiconductor. The first barrier layer being formed on a substrate of a second III-V compound semiconductor having a lattice constant larger than the lattice constant of the first barrier layer thereby inducing a biaxial stress in the first barrier layer. The biaxial stress results in an energy shift at resonance that increases the peak to valley current ratio of the device.

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