Semiconductor devices having gate-controlled unipolar hot-carrie

Details Semiconductor devices having gate-controlled unipolar hot-carrie Semiconductor devices having gate-controlled unipolar hot-carrie

1987-06-05

1988-06-07

Clawson Jr., Joseph E.

357 13, 357 22, 357 234, 357 2312, H01L 2978

Patent

active

047500239

ABSTRACT:
Semiconductor devices including one or more gate-controlled unipolar hot-carrier transistors have a semiconductor barrier region located between laterally-separated first and second region portions of one conductivity type. The barrier region has a net doping concentration of the opposite conductivity type and is sufficiently thin such that the depletion layers formed at zero bias with both the first and second regions substantially merge together to deplete the barrier region of mobile charge carriers. Current flow between the first and second region is at least partially by thermionic emission of charge carriers of the one conductivity type across the barrier region at a major surface of the body. The transistor has a gate in the vicinity of the barrier region and capacitively coupled thereto (for example via a dielectric layer) so as to permit the thermionic emission current to be controlled by applying a voltage to the gate to adjust the effective barrier height of the barrier region. Such transistors can be very compact and can have a fast response time with strong gate control. The gate may be located on either side of the barrier region, and junction-gates as well as insulated-gates may be used.

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