Process for CVD of tungsten

Details Process for CVD of tungsten Process for CVD of tungsten

1987-10-19

1988-06-07

Childs, Sadie L.

Coating processes

Coating by vapor, gas, or smoke

Metal coating

427255, 4272551, 4273831, 427404, C23C 1608

Patent

active

047495979

ABSTRACT:
A process is disclosed for reducing lateral encroachment and silicon consumption in LPCVD of tungsten. The process comprises a low temperature deposition of a thin layer of tungsten, followed by annealing in nitrogen at high temperature, follows by deposition of a thick layer of tungsten.

REFERENCES:
patent: 4349408 (1982-09-01), Tarng et al.
patent: 4404235 (1983-09-01), Tarng et al.
patent: 4540607 (1985-09-01), Tsao
patent: 4584207 (1986-04-01), Wilson
patent: 4595608 (1986-06-01), King et al.
patent: 4650698 (1987-03-01), Moriya et al.

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