Process for producing hydrogenated amorphous silicon thin film a

Details Process for producing hydrogenated amorphous silicon thin film a Process for producing hydrogenated amorphous silicon thin film a

1986-02-28

1988-06-07

Pianalto, Bernard D.

Coating processes

Electrical product produced

Integrated circuit, printed circuit, or circuit board

427 74, 427294, 427402, B05D 306

Patent

active

047495880

ABSTRACT:
The speed of forming a film of a hydrogenated amorphous silicon (a-Si:H) can be increased by controlling the amount of a supplied energy in relation to the film-forming speed. Application of this technique to the production of a solar cell enables a hydrogenated amorphous silicon solar cell (a-Si:H cell) having a high photoelectric conversion efficiency to be produced at high speeds. The aforesaid controlling procedure comprises adjusting the amount (KJ/g-Si.sub.2 H.sub.6) of an energy to be supplied to a film-forming speed depends mainly upon the flow rate of the gas and is not substantially affected by the amount of the energy.

REFERENCES:
patent: 4379181 (1983-04-01), Cannella et al.
patent: 4438723 (1984-03-01), Cannella et al.
patent: 4560634 (1985-12-01), Matsuo
The Journal of Non-Crystalline Solids, 32 (1979), 393-403.

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