Thin film-forming apparatus

Details Thin film-forming apparatus Thin film-forming apparatus

1989-07-19

1990-10-16

Morgenstern, Norman

Coating apparatus

Gas or vapor deposition

With treating means

118725, 427 13, 427 38, 4272481, C23C 1650

Patent

active

049627279

ABSTRACT:
A thin film-forming apparatus includes a vessel defining a reaction chamber, a stage for holding an object for processing within the reaction chamber, and members for introducing reaction gases into the reaction chamber. The apparatus further has an electrode disposed at the periphery of the object held by the stage for capturing particles which do not contribute to the formation of a thin film on the object, and a power source for applying a direct-current voltage to the electrode. By virtue of this arrangement, the apparatus is capable of preventing adhesion of foreign particles to the object, and is thus capable of forming high-quality films with a high yield.

REFERENCES:
patent: 4633809 (1987-01-01), Hirose et al.
patent: 4664938 (1987-05-01), Walker
patent: 4676195 (1987-06-01), Yasui et al.
patent: 4805555 (1989-02-01), Itoh
patent: 4811690 (1989-03-01), Kawagoe et al.
Shintani et al., "SiO.sub.2 Particulates Dispersed in CVD Reactor" J. Electrochem. Soc., vol. 124, No. 11, pp. 1771-1776, (1977).
"Dielectric and Polysilicon Film Deposition" VLSI Technology, S. Z. Sxe, McGraw Hill, pp. 93-128.

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