Method for forming a titanium thin film

Details Method for forming a titanium thin film Method for forming a titanium thin film

1993-11-15

1995-01-10

Breneman, R. Bruce

Single-crystal, oriented-crystal, and epitaxy growth processes;

Forming from vapor or gaseous state

With decomposition of a precursor

C30B 2954

Patent

active

053797183

ABSTRACT:
A method for producing a titanium thin film comprises: forming the titanium thin film on a substrate in the presence of water vapor gas by CVD method which uses a material gas containing an organic titanium compound having an aliphatic alkoxide or an aliphatic diketone as a ligand.

REFERENCES:
patent: 4346131 (1982-08-01), Yoldas
patent: 4361598 (1982-11-01), Yoldas
patent: 4802740 (1989-02-01), Hotta et al.
patent: 4859492 (1989-08-01), Rogers, Jr. et al.
patent: 5008149 (1991-04-01), Taga et al.
patent: 5130172 (1992-07-01), Hicks et al.
patent: 5273783 (1993-12-01), Wanner

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