Process for depositing silicon dioxide films

Details Process for depositing silicon dioxide films Process for depositing silicon dioxide films

1991-01-29

1992-07-21

Bell, Janyce

Coating processes

Optical element produced

Transparent base

427108, 427345, 427435, 4274432, B05D 506

Patent

active

051321408

ABSTRACT:
A process for depositing a silicon dioxide film on the surface of a substrate such as alkali-containing glass by bringing the substrate into contact with a treating solution comprising a hydrosilicofluoric acid solution supersaturated with silicon dioxide, which is obtained by heating a hydrosilicofluoric acid solution substantially saturated with silicon dioxide which has a temperature of not more than 0.degree. C., to a temperature of not less than 25.degree. C.

REFERENCES:
patent: 2490662 (1949-12-01), Thomsen
patent: 2505629 (1950-04-01), Thomsen et al.
patent: 4468420 (1984-08-01), Kawahara et al.
Kawahara, "Formation of SiO.sub.2 Film through Chemical Reactions in Aqueous Solutions," in Molten Salts, vol. 33, No. 1, Feb. '90, pp. 7-23.
Sakai et al., "Advanced Process for SiO.sub.2 Film Deposition in Aqueous Solutions," Proceedings of the International Ceramics Conference, Perth Western Austrailia-AUSTCERAM 90, 26-31, Aug. '90, pp. 474-479.

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