Self aligned aluminum polycrystalline silicon contact

Details Self aligned aluminum polycrystalline silicon contact Self aligned aluminum polycrystalline silicon contact

1980-06-30

1983-04-19

Larkins, William D.

357 59, 357 71, H01L 2978, H01L 2352, H01L 21285, H01L 2904

Patent

active

043807739

ABSTRACT:
An improved self-aligned conductive gate member formed by suppressing or decreasing the size of the as-deposited grains of polysilicon and by suppressing further grain growth which may occur during a subsequent annealing or processing step. By maintaining the as-deposited grains as small as possible, the initiation of intergranular voids is minimized.

REFERENCES:
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patent: 3649884 (1972-03-01), Haneta
patent: 3836992 (1974-09-01), Abbas et al.
patent: 4054895 (1977-10-01), Ham
patent: 4171997 (1979-10-01), Irmler
patent: 4249968 (1981-02-01), Gardiner et al.
patent: 4302763 (1981-11-01), Ohuchi et al.
J. Appl. Phys., vol. 50, No. 9, Sep. 1979, pp. 5826-5829.

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