Semiconductor Laser

Details Semiconductor Laser Semiconductor Laser

1990-08-15

1991-12-17

Epps, Georgia

Coherent light generators

Particular active media

Semiconductor

372 46, H01S 319

Patent

active

050738950

ABSTRACT:
A transverse junction stripe semiconductor laser includes a double heterostructure of a first semiconductor layer of a first conductivity type, a second semiconductor layer of the first conductivity type having a smaller energy band gap than that of the first semiconductor layer, and a third semiconductor layer of the first conductivity type having a smaller energy band gap than that of the second semiconductor layer, and an impurity region of the second conductivity type formed through part of the first, second, and third semiconductor layers, wherein the first, second, and third layers are AlGaInAs.

REFERENCES:
patent: 4183038 (1980-01-01), Namizaki et al.
Susaki et al., "Single Mode Transverse Junction Stripe Laser", IEEE Tokyo Section, 1978.
Kumabe et al., "High Temperature . . . GaAs Substrate", Japanese Journal of Applied Physics, vol. 18, 1979, pp. 371-374.
Bull et al., "Oxide Defined . . . DH Structures", IEEE Journal of Quantum Electronics, vol. QE-15, No. 8,8-1979, pp. 710-713.
Namizaki, "Transvrse-Junction-Stripe . . . Homojunction", IEEE nal of Quantum Electronics, vol. QE-11, No. 7,7-1975, pp. 427-431.

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