Semiconductor laser device

Coherent light generators – Particular active media – Semiconductor

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372 46, 372 26, 372 28, H01S 319

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active

050738925

ABSTRACT:
A semiconductor laser device of the field modulation type includes a structure in which the threshold carrier density for laser oscillation is reduced so as to enable an effective action of a modulated electric field applied externally on an active region for radiating light, thereby enabling an extremely high speed modulation. A quantum structure which does not fulfill the charge neutrality condition for free-carriers or a strained super lattice structure is adopted as the structure in which the threshold carrier density is reduced.

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Japanese Journal of Applied Physics/Part 2: Letters, vol. 26, No. 2, Feb. 1987, pp. L117-L119, Tokyo, JP; T. Takeoka et al: "A 140 ps optical pulse generation by field-induced gain switching in a photo-excited quantum well Laser".
Patent Abstracts of Japan vol. 10, No. 129, May 14, 1986; JP-A-60260181 (Fujitsu K.K.).

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