Semiconductor integrated circuit device and manufacturing method

Details Semiconductor integrated circuit device and manufacturing method Semiconductor integrated circuit device and manufacturing method

1990-10-19

1991-12-17

Prenty, Mark

357 59, 357 4, H01L 2972, H01L 294, H01L 2712

Patent

active

050738100

ABSTRACT:
A semiconductor integrated circuit device having at least one bipolar transistor comprises a semiconductor substrate of monocrystalline silicon having a main surface; an isolation oxide layer selectively formed on the main surface so as to surround an active region of the main surface; a first silicon layer formed on the active region and extending on the isolation oxide layer and a second silicon layer stacked on the first silicon layer, wherein a collector region of a bipolar transistor is formed on the active region of the first silicon layer, the intrinsic base region is formed on the active region of the second silicon layer, and a base-lead out region which is electrically connected with the intrinsic base region is formed of the first and second silicon layers over the isolation oxide layer.

REFERENCES:
patent: 4725874 (1988-02-01), Ooga et al.

Affiliated with

Also associated with

Rating

Semiconductor integrated circuit device and manufacturing method does not yet have a rating. At this time, there are no reviews or comments for this patent.

If you have personal experience with Semiconductor integrated circuit device and manufacturing method, we encourage you to share that experience with our LandOfFree.com community. Your opinion is very important and Semiconductor integrated circuit device and manufacturing method will most certainly appreciate the feedback.

Rate now

Comments { 0 }

Profile ID: LFUS-PAI-O-838100