Solid state semiconductor device

Details Solid state semiconductor device Solid state semiconductor device

1989-07-24

1991-12-17

James, Andrew J.

357 32, 357 24, H01L 2714, H01L 3100

Patent

active

050738089

ABSTRACT:
A solid-state semiconductor device which is used as an image sensor or the like has a transfer electrodes which are formed over a semiconductor substrate through an insulating layer and consist of material having a relatively low conductivity wiring means are arranged along the directions of the surfaces of the transfer electrodes and consist of material having a relatively high conductivity for short-circuiting parts of the transfer electrodes. In this device, the signal transfer charcteristics of the transfer electrodes are improved.

REFERENCES:
patent: 4194213 (1980-03-01), Kano et al.
patent: 4291322 (1981-09-01), Clemens et al.
patent: 4329706 (1982-05-01), Crowder et al.
patent: 4362597 (1982-12-01), Fraser et al.
patent: 4366335 (1982-12-01), Feng et al.
patent: 4443652 (1984-04-01), Izu et al.
patent: 4567524 (1986-01-01), Levine
Ross, D., "Optoelektonik", Oldenbourg, 1982, pp. 150-151.
Ross, D., "Optical Devices and Optical Imaging Techniques", The Macmillian Press, 1979, pp. 121-125.

Affiliated with

Also associated with

Rating

Solid state semiconductor device does not yet have a rating. At this time, there are no reviews or comments for this patent.

If you have personal experience with Solid state semiconductor device, we encourage you to share that experience with our LandOfFree.com community. Your opinion is very important and Solid state semiconductor device will most certainly appreciate the feedback.

Rate now

Comments { 0 }

Profile ID: LFUS-PAI-O-838059