Method of forming semiconductor materials and barriers

Patent

Rate now

  [ 0.00 ] – not rated yet Voters 0   Comments 0

Details

357 15, 357 30, 357 59, H01L 310392, H01L 31062, H01L 3107

Patent

active

050738046

ABSTRACT:
In a gaseous glow-discharge process for coating a substrate with semiconductor material, a variable electric field in the region of the substrate and the pressure of the gaseous material are controlled to produce a uniform coating having useful semiconducting properties. Electrodes having concave and cylindrical configurations are used to produce a spacially varying electric field. Twin electrodes are used to enable the use of an AC power supply and collect a substantial part of the coating on the substrate. Solid semiconductor material is evaporated and sputtered into the glow discharge to control the discharge and improve the coating. Schottky barrier and solar cell structures are fabricated from the semiconductor coating. Activated nitrogen species is used to increase the barrier height of Schottky barriers.

REFERENCES:
patent: 3068510 (1962-12-01), Coleman
patent: 3455020 (1969-07-01), Dauson
patent: 3631308 (1971-12-01), Krolikowski
patent: 4016589 (1977-04-01), Tanimura
patent: 4064521 (1977-12-01), Carlson
patent: 4117506 (1978-09-01), Carlson et al.
patent: 4142195 (1979-02-01), Carlson
patent: 4196438 (1980-04-01), Carlson
patent: 4282537 (1981-08-01), Balberg
patent: 4291318 (1981-09-01), Sansgret
Spear, Proceed. Of The Fifth Int. Conf. On Amorphous Semiconductors, Sep. 3-8, 1973.

LandOfFree

Say what you really think

Search LandOfFree.com for the USA inventors and patents. Rate them and share your experience with other people.

Rating

Method of forming semiconductor materials and barriers does not yet have a rating. At this time, there are no reviews or comments for this patent.

If you have personal experience with Method of forming semiconductor materials and barriers, we encourage you to share that experience with our LandOfFree.com community. Your opinion is very important and Method of forming semiconductor materials and barriers will most certainly appreciate the feedback.

Rate now

     

Profile ID: LFUS-PAI-O-837953

  Search
All data on this website is collected from public sources. Our data reflects the most accurate information available at the time of publication.