Rapid thermal annealing of gallium arsenide with trimethyl arsen

Details Rapid thermal annealing of gallium arsenide with trimethyl arsen Rapid thermal annealing of gallium arsenide with trimethyl arsen

1989-02-01

1989-11-07

Hearn, Brian E.

Fishing, trapping, and vermin destroying

437174, 437949, 437 22, 437942, 148DIG4, 148DIG22, 148DIG84, 357 91, H01L 21383

Patent

active

048792594

ABSTRACT:
A method of annealing a wafer in a rapid thermal annealer is disclosed. The walls of the chamber are heated more rapidly than is the wafer. In a preferred embodiment, the interior of the graphite walls of the annealer is lined with a molybdenum sheet which is open toward the lamps that heat the chamber. Thus, the walls heat very rapidly to a temperature greater than the condensation point of arsenic, preventing arsenic condensation on the walls. Effective annealing can be achieved at wall temperatures in the range of 500.degree. to 600.degree. C. Prior to the heat ramp up, an arsenic atmosphere, preferably trimethylarsenic (TMAs) at an appropriate overpressure is introduced. This overpressure is maintained both during the heating and cooling cycle. By the use of this method, the exposure time for annealing can be reduced from prior times of as much as 20 minutes to as little as 10 seconds.

REFERENCES:
patent: 4472206 (1984-09-01), Hodgson et al.
patent: 4568397 (1986-02-01), Hoke et al.
patent: 4661177 (1987-04-01), Powell
Kasahara et al, "Capless Anneal of Ion-Implanted GaAs in Controlled Arsenic Vapor", J. Appl. Phys. 50 (1), Jan. 1979, pp. 541-543.
Greiner et al, "Diffusion of Silicon in Gallium Arsenide Using Rapid Thermal Processing: Experiment and Model", Appl. Phys. Lett. 44(8), Apr. 15, 1984, pp. 750-752.
Ito et al., "Radiation Annealing of Si- and S-Implanted GaAs", Japanese Journal of Applied Physics, vol. 22, No. 5, May, 1983, pp. L299-L300.
Liu et al, "Rapid Capless Annealing of Si, Zn, and Be Implants to GaAs", Journal of Electronics Materials, vol. 13, No. 6, 1984, pp. 897-911.
Hara et al., "Capless Rapid Thermal Annealing of Silicon Ion Implanted Gallium Arsenide", Japanese Journal of Applied Physics, vol. 26, No. 2, Feb., 1987, pp. L94-L96.

Affiliated with

Also associated with

Rating

Rapid thermal annealing of gallium arsenide with trimethyl arsen does not yet have a rating. At this time, there are no reviews or comments for this patent.

If you have personal experience with Rapid thermal annealing of gallium arsenide with trimethyl arsen, we encourage you to share that experience with our LandOfFree.com community. Your opinion is very important and Rapid thermal annealing of gallium arsenide with trimethyl arsen will most certainly appreciate the feedback.

Rate now

Comments { 0 }

Profile ID: LFUS-PAI-O-83771