Fishing – trapping – and vermin destroying
Patent
1990-07-17
1991-12-17
Chaudhuri, Olik
Fishing, trapping, and vermin destroying
437 29, 437 35, 437 41, 437238, 357 233, H01L 21265, H01L 21336
Patent
active
050735144
ABSTRACT:
This invention discloses a method of manufacturing a MIS semiconductor device having at least a portion of a drain region which contacts a channel and has a relatively low impurity concentration to obtain an LDD structure, wherein an insulating film is formed on at least a surface of a semiconductor substrate or double side walls are formed on a gate electrode, the surface is oxidized, and in this state, an impurity region having a relatively high impurity concentration is formed to manufacture a MIS semiconductor device having excellent characteristics at a high yield.
REFERENCES:
patent: 4172260 (1979-10-01), Okabe et al.
patent: 4258465 (1981-03-01), Yasui et al.
patent: 4356623 (1982-11-01), Hunter
patent: 4419809 (1983-12-01), Riseman et al.
patent: 4488351 (1984-12-01), Momose
patent: 4642878 (1987-02-01), Maeda
patent: 4728617 (1988-03-01), Woo et al.
patent: 4744859 (1988-05-01), Hu et al.
patent: 4746624 (1988-05-01), Cham et al.
patent: 4771012 (1988-09-01), Yabu et al.
patent: 4818714 (1989-04-01), Haskell
patent: 4921812 (1990-05-01), Nagai
Tsang et al., "Fabrication of High Performance LDDFET's with Oxide Sidewall--Spacer Technology", IEEE Trans. on Electron Devices, vol. ED--29, No. 4, Apr. 1982, pp. 590-596.
Ito Shin'ichi
Noshi Naoya
Okamoto Yutaka
Chaudhuri Olik
Sony Corporation
Wilczewski M.
LandOfFree
Method of manufacturing MIS semiconductor device does not yet have a rating. At this time, there are no reviews or comments for this patent.
If you have personal experience with Method of manufacturing MIS semiconductor device, we encourage you to share that experience with our LandOfFree.com community. Your opinion is very important and Method of manufacturing MIS semiconductor device will most certainly appreciate the feedback.
Profile ID: LFUS-PAI-O-835426