Method of making a semiconductor switching device

Details Method of making a semiconductor switching device Method of making a semiconductor switching device

1981-02-20

1983-04-19

Andrews, M. J.

Metal working

Method of mechanical manufacture

Assembling or joining

29589, 29590, 29591, 357 38, 357 39, 357 71, 307252B, H01L 21603, H01L 2128, H01L 21302, H01L 2156

Patent

active

043801145

ABSTRACT:
A triac device includes a first silicon chip having regions of alternate conductivity type disposed in a PN-junction forming relationship which defines a center-fired triac. A second silicon chip having regions defining a diac is bonded to the gate region of the triac chip. A copper layer of about 1 to 5 mils in thickness is bonded to the portions of the top major face of the triac chip that surround the gate region. Cathode, anode and gate connections are provided to the two-chip subassembly which is then encapsulated. The copper layer permits a smaller cathode connection to be made to the top of the triac chip without reducing the current capacity of the device.
The triac device is mass-produced by first forming a plurality of triac chips in a two-dimensional array in a large area silicon wafer. The copper layers and diac chips are formed on the wafer prior to its separation into separate diac-triac chip subassemblies.

REFERENCES:
patent: 2603693 (1952-06-01), Kircher
patent: 3235945 (1966-02-01), Hall et al.
patent: 3364399 (1968-01-01), Warner
patent: 3581386 (1971-06-01), Dale et al.
patent: 3620692 (1971-11-01), Franklin et al.
patent: 3698074 (1972-10-01), Helda et al.
patent: 3855611 (1974-12-01), Neilson et al.
patent: 3896480 (1975-07-01), Harnden, Jr.
patent: 3919709 (1975-11-01), Koenig
patent: 3964091 (1976-06-01), Berndes et al.
patent: 4052624 (1977-10-01), Hamstra
patent: 4063277 (1977-12-01), Gooen
patent: 4083063 (1978-04-01), Yu

Affiliated with

Also associated with

Rating

Method of making a semiconductor switching device does not yet have a rating. At this time, there are no reviews or comments for this patent.

If you have personal experience with Method of making a semiconductor switching device, we encourage you to share that experience with our LandOfFree.com community. Your opinion is very important and Method of making a semiconductor switching device will most certainly appreciate the feedback.

Rate now

Comments { 0 }

Profile ID: LFUS-PAI-O-833945